The BSM150GT120DN2 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 200A. It has a maximum power dissipation of 1.25kW and operates over a temperature range of -40°C to 150°C. The transistor is packaged in a module format and is mounted via screws. It is not radiation hardened and is not RoHS compliant.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 1.25kW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
