The BSM15GD120DN2 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 25A. It features a high power dissipation of 145W and is available in a module package type. The device is RoHS compliant and suitable for operation in a temperature range of -40°C to 150°C. It is designed for use in high-power applications and is available in a package quantity of 10.
PackageModule
MountingThrough Hole, Screw
Power145W
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Technical Specifications
Infineon BSM15GD120DN2 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 145W |
| Mount | Through Hole, Screw |
| Package Quantity | 10 |
| Power Dissipation | 145W |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM15GD120DN2 Datasheet
Download the complete datasheet for Infineon BSM15GD120DN2 to view detailed technical specifications.
No datasheet is available for this part.