The BSM15GD120DN2E3224 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 25A. It is packaged in a module with a screw mount and has a maximum power dissipation of 145W. The device operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The module measures 17mm in height, 45mm in width, and 107.5mm in length.
PackageModule
MountingScrew
Power145W
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Technical Specifications
Infineon BSM15GD120DN2E3224 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 145W |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 145W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM15GD120DN2E3224 Datasheet
Download the complete datasheet for Infineon BSM15GD120DN2E3224 to view detailed technical specifications.
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