The BSM15GP120 is an insulated gate bipolar transistor module with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 35A. It has a maximum power dissipation of 180W and operates within a temperature range of -40°C to 125°C. The module is packaged in a Module-24 package and is RoHS compliant. It is designed for use in high-power applications where a high current and voltage are required.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSM15GP120 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 35A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 180W |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 180W |
| RoHS Compliant | Yes |
| Width | 45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM15GP120 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
