The BSM15GP60 is a 600V insulated gate bipolar transistor (IGBT) module from Infineon. It features a collector-emitter breakdown voltage of 600V and a saturation voltage of 1.95V. The module is designed for high-power applications and has a maximum collector current of 20A. It is packaged in a module with a screw mount and is available in a tray with 10 units per package. The BSM15GP60 is RoHS compliant and has an operating temperature range of -40°C to 125°C.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector-emitter Voltage-Max | 600V |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100W |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Tray |
| RoHS Compliant | Yes |
| Width | 45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM15GP60 to view detailed technical specifications.
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