The BSM200GA120DN2 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 300A. It is packaged in a module with dimensions of 36.5mm height, 106.4mm length, and 61.4mm width. The device is designed to operate within a temperature range of -40°C to 150°C and has a maximum power dissipation of 1.55kW. The BSM200GA120DN2 is RoHS compliant and suitable for use in high-power applications.
Sign in to ask questions about the Infineon BSM200GA120DN2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSM200GA120DN2 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 36.5mm |
| Length | 106.4mm |
| Max Collector Current | 300A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.55kW |
| Mount | Panel, Screw |
| Package Quantity | 10 |
| Power Dissipation | 1.55kW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 61.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM200GA120DN2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
