The BSM200GB120DLC is a 1.2kV insulated gate bipolar transistor (IGBT) module from Infineon. It features a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 420A. The module is designed for high-power applications and has a maximum power dissipation of 1.55kW. It operates within a temperature range of -40°C to 125°C and is compliant with RoHS regulations. The module is packaged in a module format with a screw mount and is available in quantities of 10.
PackageModule
MountingScrew
Power1.55kW
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Technical Specifications
Infineon BSM200GB120DLC technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 30.5mm |
| Length | 106.4mm |
| Max Collector Current | 420A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.55kW |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 1.55kW |
| RoHS Compliant | Yes |
| Width | 61.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM200GB120DLC Datasheet
Download the complete datasheet for Infineon BSM200GB120DLC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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