The BSM200GB120DLC is a 1.2kV insulated gate bipolar transistor (IGBT) module from Infineon. It features a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 420A. The module is designed for high-power applications and has a maximum power dissipation of 1.55kW. It operates within a temperature range of -40°C to 125°C and is compliant with RoHS regulations. The module is packaged in a module format with a screw mount and is available in quantities of 10.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSM200GB120DLC datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 30.5mm |
| Length | 106.4mm |
| Max Collector Current | 420A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.55kW |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 1.55kW |
| RoHS Compliant | Yes |
| Width | 61.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM200GB120DLC to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
