Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Checking distributor stock and pricing after the page loads.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 3V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 30mm |
| Length | 106.4mm |
| Max Collector Current | 290A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.4kW |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 1.4kW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Termination | Screw |
| Width | 61.4mm |
| RoHS | Compliant |
