The BSM25GD120DN2 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 35A. It is packaged in an ECONOPACK-17 module with a height of 17mm, length of 107.5mm, and width of 45mm. The transistor is designed for through-hole or screw mounting and has a maximum power dissipation of 200W. The operating temperature range is from -40°C to 150°C. The device is RoHS compliant but not radiation hardened or SVHC compliant.
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Infineon BSM25GD120DN2 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole, Screw |
| Package Quantity | 10 |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM25GD120DN2 to view detailed technical specifications.
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