The BSM25GD120DN2E3224 is an insulated gate bipolar transistor module from Infineon with a maximum collector-emitter voltage of 1.2kV and a maximum collector current of 35A. It features a collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 200W. The module is packaged in an ECONOPACK-17 and measures 17mm in height, 45mm in width, and 107.5mm in length. It operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
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Infineon BSM25GD120DN2E3224 technical specifications.
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 200W |
| Mount | Screw |
| Package Quantity | 10 |
| RoHS Compliant | Yes |
| Width | 45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM25GD120DN2E3224 to view detailed technical specifications.
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