The BSM300GA120DN2 is an insulated gate bipolar transistor from Infineon. It features a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 430A. The device is packaged in a 4-pin module with a maximum power dissipation of 2.5kW. It operates within a temperature range of -40°C to 150°C and is RoHS compliant.
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Infineon BSM300GA120DN2 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 36.5mm |
| Length | 106.4mm |
| Max Collector Current | 430A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.5kW |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 61.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM300GA120DN2 to view detailed technical specifications.
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