Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN
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Infineon BSM300GA170DN2S technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 1.7kV |
| Max Operating Temperature | 150°C |
| Package Quantity | 500 |
| Power Dissipation | 2.5kW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
