The BSM35GD120DN2 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum power dissipation of 280W and operates within a temperature range of -40°C to 150°C. The device is packaged in an ECONOPACK-17 module, which is a chassis mount, screw type package. It is RoHS compliant and available in a tray packaging with 10 units per package.
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Infineon BSM35GD120DN2 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 3.2V |
| Height | 17mm |
| Input | Standard |
| Input Capacitance | 2nF |
| Length | 107.5mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 280W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Tray |
| Power Dissipation | 280W |
| RoHS Compliant | Yes |
| Width | 45.5mm |
| RoHS | Compliant |
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