The BSM50GD120DN2 is an insulated gate bipolar transistor with a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 72A. It is packaged in an ECONOPACK-17 module, suitable for through hole or screw mounting. The device can withstand a maximum operating temperature of 125°C and a maximum power dissipation of 350W. The BSM50GD120DN2 is compliant with RoHS regulations but not SVHC compliant.
PackageModule
MountingThrough Hole, Screw
Power350W
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Technical Specifications
Infineon BSM50GD120DN2 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 72A |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole, Screw |
| Power Dissipation | 350W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM50GD120DN2 Datasheet
Download the complete datasheet for Infineon BSM50GD120DN2 to view detailed technical specifications.
No datasheet is available for this part.