The BSM50GD120DN2E3226 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It is packaged in a module format and is designed for screw mounting. The device can withstand a maximum operating temperature of 150°C and has a power dissipation of 350W. It is not radiation hardened and is not RoHS compliant.
PackageModule
MountingScrew
Power350W
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Technical Specifications
Infineon BSM50GD120DN2E3226 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BSM50GD120DN2E3226 Datasheet
Download the complete datasheet for Infineon BSM50GD120DN2E3226 to view detailed technical specifications.
No datasheet is available for this part.