The BSM50GP60 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 70A and a maximum power dissipation of 250W. It is packaged in a module with a screw mount and is available in quantities of 10. The device is RoHS compliant and has an operating temperature range of -40°C to 125°C. The IGBT has a collector-emitter breakdown voltage of 1.6kV and a collector-emitter saturation voltage of 2.2V.
PackageModule
MountingScrew
Power250W
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Technical Specifications
Infineon BSM50GP60 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.6kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector-emitter Voltage-Max | 600V |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM50GP60 Datasheet
Download the complete datasheet for Infineon BSM50GP60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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