The BSM75GB120DN2 is a high-power insulated gate bipolar transistor (IGBT) module from Infineon. It features a collector-emitter voltage rating of 1.2kV and a maximum collector current of 105A. The module is designed for high-power applications and has a maximum power dissipation of 625W. It operates over a temperature range of -40°C to 150°C and is RoHS compliant.
PackageModule
MountingScrew
Power625W
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Technical Specifications
Infineon BSM75GB120DN2 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 30.5mm |
| Length | 94mm |
| Max Collector Current | 105A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 625W |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 625W |
| RoHS Compliant | Yes |
| Width | 34mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM75GB120DN2 Datasheet
Download the complete datasheet for Infineon BSM75GB120DN2 to view detailed technical specifications.
No datasheet is available for this part.