Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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Infineon BSM75GB120DN2HOSA1 technical specifications.
| Number of Terminals | 7 |
| Terminal Position | UPPER |
| Pin Count | 7 |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
