The BSM75GD120DN2 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 103A and a maximum power dissipation of 520W. It is available in a module package with a screw mount. The device operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The module dimensions are 17mm in height, 62mm in width, and 122mm in length.
PackageModule
MountingScrew
Power520W
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Technical Specifications
Infineon BSM75GD120DN2 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 122mm |
| Max Collector Current | 103A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 520W |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 520W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 62mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM75GD120DN2 Datasheet
Download the complete datasheet for Infineon BSM75GD120DN2 to view detailed technical specifications.
No datasheet is available for this part.