Infineon
BSM75GD60DLC
Insulated Gate Bipolar Transistor, 95A I(C), 600V V(BR)CES, N-Channel, MODULE-17
PackageModule
MountingScrew
Power330W
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Technical Specifications
Infineon BSM75GD60DLC technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Collector-emitter Voltage-Max
600V
Max Collector Current
95A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Mount
Screw
Package Quantity
500
Power Dissipation
330W
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon BSM75GD60DLC Datasheet
Download the complete datasheet for Infineon BSM75GD60DLC to view detailed technical specifications.
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