Power Field-Effect Transistor, 9.8A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
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Infineon BSO080P03NS3EGXT technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 12A |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
