P-Channel MOSFET, surface mount, SOIC package. Features 30V drain-to-source breakdown voltage and 12.6A continuous drain current. Offers low on-resistance of 8mR and fast switching times with 15ns turn-on delay and 22ns fall time. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.79W.
PackageSOIC
Current Rating-12.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Infineon BSO080P03S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12.6A |
| Current Rating | -12.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 5.89nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.79W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.79W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BSO080P03S Datasheet
Download the complete datasheet for Infineon BSO080P03S to view detailed technical specifications.
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