N-Channel MOSFET, 30V Vds, 7.6A Continuous Drain Current, 15mΩ Rds On. Features 2 N-Channel elements in a surface mount SOIC package, offering a 1.4W power dissipation and operating temperature range of -55°C to 150°C. Includes a 4ns fall time and 21ns turn-off delay time, with 1.89nF input capacitance. This RoHS compliant component is supplied on tape and reel.
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Infineon BSO150N03 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Current Rating | 9.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.89nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 21ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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