The BSO203P is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 2W and a continuous drain current of 8.2A. The device features a drain to source breakdown voltage of -20V and a drain to source resistance of 21mR. It is packaged in a SOIC-8 package and is suitable for surface mount applications.
PackageSOIC
Current Rating-8.2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Infineon BSO203P technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | -8.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 63.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.242nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 21mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 59ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BSO203P Datasheet
Download the complete datasheet for Infineon BSO203P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.