
The BSO203P is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 2W and a continuous drain current of 8.2A. The device features a drain to source breakdown voltage of -20V and a drain to source resistance of 21mR. It is packaged in a SOIC-8 package and is suitable for surface mount applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSO203P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSO203P technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | -8.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 63.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.242nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 21mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 59ns |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon BSO203P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.