N-Channel MOSFET, 30V Vds, 6A Continuous Drain Current, 22mΩ Rds On. This surface-mount transistor features a 2-element silicon metal-oxide semiconductor construction in a GREEN plastic SOIC package with tin plating. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1.4W. It offers a Gate to Source Voltage of 20V and an input capacitance of 800pF, meeting RoHS and Halogen Free standards.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Infineon BSO220N03MDGXUMA1 technical specifications.
General
| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO220N03MDGXUMA1 Datasheet
Download the complete datasheet for Infineon BSO220N03MDGXUMA1 to view detailed technical specifications.
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