Power Field-Effect Transistor, 14.9A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8
Sign in to ask questions about the Infineon BSO301SPNTMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSO301SPNTMA1 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.89nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 15ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon BSO301SPNTMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
