N-channel MOSFET, 20V Drain-to-Source Voltage (Vdss), 5.4A Continuous Drain Current (ID), and 30mΩ Rds On Max. Features include 730pF input capacitance, 2.8ns fall time, 7.4ns turn-on delay, and 13.4ns turn-off delay. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 1.4W. Packaged in SOIC (PG-DSO-8) on tape and reel, this RoHS compliant component is ideal for power management applications.
Infineon BSO330N02KG technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 2.8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 730pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Nominal Vgs | 950mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 950mV |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 7.4ns |
| RoHS | Compliant |
No datasheet is available for this part.
