Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
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Infineon BSO4804 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 24ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 870pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 18ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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