N-channel MOSFET featuring 55V drain-source breakdown voltage and 5A continuous drain current. Surface mountable in a SOIC package with tin plating, this silicon metal-oxide semiconductor FET offers 35mΩ on-state resistance and 2W power dissipation. Operating from -55°C to 150°C, it includes 870pF input capacitance and an 8ns fall time.
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| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| On-State Resistance | 35mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
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