The BSO612CV is a P-channel MOSFET from Infineon, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2W and is packaged in a SOIC-8 plastic package. The device has a continuous drain current of 2A and a drain to source breakdown voltage of -60V. It also has a gate to source voltage of 20V and an input capacitance of 340pF.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSO612CV datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSO612CV technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 95ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 340pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | No |
| Series | SIPMOS® |
| Turn-Off Delay Time | 145ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon BSO612CV to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
