The BSO612CV is a P-channel MOSFET from Infineon, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2W and is packaged in a SOIC-8 plastic package. The device has a continuous drain current of 2A and a drain to source breakdown voltage of -60V. It also has a gate to source voltage of 20V and an input capacitance of 340pF.
PackageSOIC
Current Rating3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Infineon BSO612CV technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 95ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 340pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | No |
| Series | SIPMOS® |
| Turn-Off Delay Time | 145ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BSO612CV Datasheet
Download the complete datasheet for Infineon BSO612CV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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