Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
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Infineon BSO612CVGHUMA1 technical specifications.
| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.45mm |
| Input Capacitance | 340pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 145ns |
| Width | 4mm |
| RoHS | Compliant |
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