P-channel MOSFET, 60V drain-source breakdown voltage, 3.44A continuous drain current, and 130mΩ Rds On. Features include a 10ns turn-on delay, 12ns fall time, and 32ns turn-off delay. Operates from -55°C to 150°C with a 2.5W power dissipation. Surface mountable in a green plastic SOP-8 package with tin plating.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSO613SPVGHUMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSO613SPVGHUMA1 technical specifications.
| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 3.44A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 875pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSO613SPVGHUMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
