P-channel MOSFET, 60V drain-source breakdown voltage, 3.44A continuous drain current, and 130mΩ Rds On. Features include a 10ns turn-on delay, 12ns fall time, and 32ns turn-off delay. Operates from -55°C to 150°C with a 2.5W power dissipation. Surface mountable in a green plastic SOP-8 package with tin plating.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Infineon BSO613SPVGHUMA1 technical specifications.
General
| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 3.44A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 875pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO613SPVGHUMA1 Datasheet
Download the complete datasheet for Infineon BSO613SPVGHUMA1 to view detailed technical specifications.
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