The BSO615CGHUMA1 is a dual N and P-channel MOSFET from Infineon, packaged in a small outline SO package. It can handle a maximum drain current of 2A and a maximum drain to source voltage of 60V. The device is lead free and RoHS compliant, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2W and an input capacitance of 380pF.
PackageSO
MountingSurface Mount
Power2W
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Technical Specifications
Infineon BSO615CGHUMA1 technical specifications.
General
| Package/Case | SO |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO615CGHUMA1 Datasheet
Download the complete datasheet for Infineon BSO615CGHUMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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