The BSO615CT is a dual-channel MOSFET from Infineon, featuring a package quantity of one device per cut tape. It has a maximum power dissipation of 2W and a continuous drain current of 2A. The device is rated for a drain to source voltage of 60V and has a maximum Rds on resistance of 110mR. It is suitable for surface mount applications and is lead free.
PackageSOIC
Current Rating3.1A
MountingSurface Mount
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Technical Specifications
Infineon BSO615CT technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 3.1A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | N and P-Channel |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 110mR |
| Series | SIPMOS® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO615CT Datasheet
Download the complete datasheet for Infineon BSO615CT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.