The BSO615NGHUMA1 is a 2 N-Channel MOSFET from Infineon with a maximum drain to source voltage of 60V and continuous drain current of 2.6A. It features a power dissipation of 2W and is packaged in a surface mount SOIC package. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It is available in a tape and reel packaging format.
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Infineon BSO615NGHUMA1 technical specifications.
| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| RoHS | Compliant |
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