The BSP123E6327T is a SIPMOS MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.79W and a maximum drain to source voltage of 100V. The device features a continuous drain current of 370mA and a current rating of 380mA. It is packaged in a TO-261-4 surface mount package and is available in a cut tape packaging format.
PackageTO-261-4
Current Rating380mA
MountingSurface Mount
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Technical Specifications
Infineon BSP123E6327T technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 370mA |
| Current Rating | 380mA |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 70pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.79W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 6R |
| Series | SIPMOS® |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP123E6327T Datasheet
Download the complete datasheet for Infineon BSP123E6327T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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