The BSP125L6433HTMA1 is a SIPMOS MOSFET from Infineon with a maximum drain to source voltage of 600V and continuous drain current of 120mA. It features a fall time of 110ns and a maximum power dissipation of 1.8W. The device is packaged in a SOT-223-4 and is designed for surface mount applications. It operates over a temperature range of -55°C to 150°C.
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Infineon BSP125L6433HTMA1 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 150pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 45R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7.7ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon BSP125L6433HTMA1 to view detailed technical specifications.
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