N-channel MOSFET, designed for power applications, features a 240V drain-source breakdown voltage and a continuous drain current of 350mA. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 6 Ohms and a maximum power dissipation of 1.8W. The device is housed in a SOT-223 surface-mount plastic package, supporting a wide operating temperature range from -55°C to 150°C. It is halogen-free, lead-free, and RoHS compliant, with a turn-off delay time of 22ns and a fall time of 35ns.
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Infineon BSP129H6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Breakdown Voltage | 240V |
| Drain to Source Resistance | 4.2R |
| Drain to Source Voltage (Vdss) | 240V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.8mm |
| Input Capacitance | 108pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 240V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 6R |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -2.1V |
| Turn-Off Delay Time | 22ns |
| RoHS | Compliant |
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