N-Channel Power MOSFET, 600V Vds, 120mA continuous drain current, and 45 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a 1-element design and operates within a -55°C to 150°C temperature range. Designed for surface mount applications, it is packaged in a SOT-223 plastic package and is Halogen Free, Lead Free, and RoHS Compliant.
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Infineon BSP135H6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 146pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 45R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| RoHS | Compliant |
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