Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Infineon BSP135H6433XTMA1 technical specifications.
| Package/Case | SOT-223-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 20mA |
| Drain to Source Resistance | 60R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 182ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Turn-Off Delay Time | 28ns |
| RoHS | Not Compliant |
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