The BSP135L6906 is a N-CHANNEL SIPMOS MOSFET with a drain to source breakdown voltage of 600V and a continuous drain current of 120mA. It features a drain to source resistance of 45 ohms and a maximum power dissipation of 1.8W. The device is packaged in a TO-261-4 case and is designed for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-261-4
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
Quick Jump:
Technical Specifications
Infineon BSP135L6906 technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 45R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 146pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 45R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 5.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP135L6906 Datasheet
Download the complete datasheet for Infineon BSP135L6906 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.