N-channel silicon MOSFET for surface mount applications. Features a 200V drain-to-source breakdown voltage and 660mA continuous drain current. Offers a low 1.8-ohm drain-to-source resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in a SOT-223 plastic package, this component is halogen and lead-free, with tin contact plating.
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Infineon BSP149H6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 45ns |
| RoHS | Compliant |
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