BSP149H6906XTSA1

N-channel MOSFET transistor for surface mount applications, featuring a 200V drain-to-source breakdown voltage and 660mA continuous drain current. This single-element device offers a low Rds On of 1.8 Ohms at a 10V gate-source voltage, with a maximum power dissipation of 1.8W. The SOT-223 package with tin contact plating ensures reliable performance across a wide operating temperature range of -55°C to 150°C. Fast switching characteristics are evident with a 5.1ns turn-on delay and 21ns fall time. This component is RoHS and Halogen free, supplied in tape and reel packaging.