N-channel MOSFET transistor for surface mount applications, featuring a 200V drain-to-source breakdown voltage and 660mA continuous drain current. This single-element device offers a low Rds On of 1.8 Ohms at a 10V gate-source voltage, with a maximum power dissipation of 1.8W. The SOT-223 package with tin contact plating ensures reliable performance across a wide operating temperature range of -55°C to 150°C. Fast switching characteristics are evident with a 5.1ns turn-on delay and 21ns fall time. This component is RoHS and Halogen free, supplied in tape and reel packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSP149H6906XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSP149H6906XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 5.1ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP149H6906XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
