P-channel MOSFET for surface mount applications, featuring a 60V drain-source breakdown voltage and 1.9A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 300mΩ at 10V/5A. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 1.8W and is housed in a green, plastic SOT-223 package. Key electrical characteristics include a 410pF input capacitance and fast switching times with a 14ns turn-on delay.
PackageSOT-223
MountingSurface Mount
PolarityP-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP170PH6327XTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 239mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 300mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 14ns |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP170PH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP170PH6327XTSA1 to view detailed technical specifications.
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