The SIPMOS MOSFET is a single-element device with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.8W and a continuous drain current of 1.9A. The device is packaged in a SOT-223 case and is mounted using a surface mount technique. It is RoHS compliant and has a maximum drain to source voltage of 60V.
PackageSOT-223
MountingSurface Mount
Power1.8W
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Technical Specifications
Infineon BSP170PL6327HTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 410pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP170PL6327HTSA1 Datasheet
Download the complete datasheet for Infineon BSP170PL6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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