
P-channel, silicon, surface-mount JFET with a 60V drain-to-source breakdown voltage and 1.9A continuous drain current. Features a 300mΩ on-state resistance and a 1.5V threshold voltage. Operates across a -55°C to 150°C temperature range with a 1.8W maximum power dissipation. Packaged in a SOT-223 plastic package, this halogen-free and lead-free component is supplied on tape and reel.
Infineon BSP171PH6327XTSA1 technical specifications.
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