P-channel, silicon, surface-mount JFET with a 60V drain-to-source breakdown voltage and 1.9A continuous drain current. Features a 300mΩ on-state resistance and a 1.5V threshold voltage. Operates across a -55°C to 150°C temperature range with a 1.8W maximum power dissipation. Packaged in a SOT-223 plastic package, this halogen-free and lead-free component is supplied on tape and reel.
PackageSOT-223
Voltage60V
Current19A
MountingSurface Mount
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Technical Specifications
Infineon BSP171PH6327XTSA1 technical specifications.
General
Package/Case
SOT-223
Contact Plating
Tin
Continuous Drain Current (ID)
1.9A
Current
19A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
87ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1.6mm
Input Capacitance
460pF
Lead Free
Lead Free
Length
6.5mm
Max Dual Supply Voltage
-60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
1.5V
On-State Resistance
300mR
Package Quantity
1000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.8W
Rds On Max
300mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
208ns
Voltage
60V
Width
6.7mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSP171PH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP171PH6327XTSA1 to view detailed technical specifications.
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