N-Channel Power MOSFET, 60V Vds, 1.8A Continuous Drain Current. Features 300mΩ Rds On, 1.8W Power Dissipation, and 150°C Max Operating Temperature. Surface mountable in a SOT-223 plastic package with tin plating. Includes 368pF input capacitance and 19ns fall time.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP295H6327XTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 368pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP295H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP295H6327XTSA1 to view detailed technical specifications.
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