BSP296L6327

N-CH MOSFET 100V 1.1A SOT-223 Surface Mount

N-channel MOSFET in SOT-223-4 package for surface mounting. Features 100V drain-source breakdown voltage (Vdss), 1.1A continuous drain current (ID), and 700mΩ drain-source resistance (Rds On Max). Operates with a 20V gate-source voltage (Vgs) and a 1.4V threshold voltage. Offers fast switching with a 5.2ns turn-on delay and 7.9ns fall time. RoHS compliant with a maximum power dissipation of 1.79W.

PackageSOT-223-4

Current Rating24A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Infineon BSP296L6327 technical specifications.

General

Package/Case	SOT-223-4
Continuous Drain Current (ID)	1.1A
Current Rating	24A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	700mR
Drain to Source Voltage (Vdss)	100V
Fall Time	7.9ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	364pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.79W
Mount	Surface Mount
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.79W
Radiation Hardening	No
Rds On Max	700mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SIPMOS®
Threshold Voltage	1.4V
Turn-Off Delay Time	37.4ns
Turn-On Delay Time	5.2ns
DC Rated Voltage	100V