N-channel MOSFET in SOT-223-4 package for surface mounting. Features 100V drain-source breakdown voltage (Vdss), 1.1A continuous drain current (ID), and 700mΩ drain-source resistance (Rds On Max). Operates with a 20V gate-source voltage (Vgs) and a 1.4V threshold voltage. Offers fast switching with a 5.2ns turn-on delay and 7.9ns fall time. RoHS compliant with a maximum power dissipation of 1.79W.
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Infineon BSP296L6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 364pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.79W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.79W |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 37.4ns |
| Turn-On Delay Time | 5.2ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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