N-channel silicon MOSFET, 100V drain-source voltage, 1.2A continuous drain current, and 0.6 ohm drain-source resistance. Features include a 1.6mm height, 6.5mm length, and 3.5mm width in a SOT-223 surface-mount plastic package with tin contact plating. Operates from -55°C to 150°C with a maximum power dissipation of 1.8W. This component is halogen-free, lead-free, and RoHS compliant.
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Infineon BSP296NH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 21.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 152.7pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37.4ns |
| Turn-On Delay Time | 5.2ns |
| Weight | 0.008826oz |
| Width | 3.5mm |
| RoHS | Compliant |
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