N-Channel Power MOSFET, 400V Vds, 500mA Continuous Drain Current. Features 3 Ohm Rds On Max, 1.8W Power Dissipation, and 150°C Max Operating Temperature. This single-element silicon FET offers 20V Gate to Source Voltage and a 3V Threshold Voltage. Packaged in a GREEN, SOT-223 plastic package for surface mounting, it is Halogen Free and Lead Free, supplied on tape and reel.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP298H6327XUSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | 400V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP298H6327XUSA1 Datasheet
Download the complete datasheet for Infineon BSP298H6327XUSA1 to view detailed technical specifications.
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